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| Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA212B series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT 600B 600 12 95 800B 800 12 95 V A A BTA212B- 500B Repetitive peak off-state 500 voltages RMS on-state current 12 Non-repetitive peak on-state 95 current PINNING - SOT404 PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2 PIN CONFIGURATION mb SYMBOL T2 2 1 3 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb 99 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s CONDITIONS MIN. -500 5001 MAX. -600 6001 12 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 95 105 45 100 2 5 5 0.5 150 125 A A A2s A/s A V W W C C over any 20 ms period -40 - 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. September 1997 1 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS BTA212B series B MIN. - TYP. 60 MAX. 1.5 2.0 - UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current 2 CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2+ G+ T2+ GT2- G- MIN. 2 2 2 0.25 - TYP. 18 21 34 31 34 30 31 1.3 0.7 0.4 0.1 MAX. 50 50 50 60 90 60 60 1.6 1.5 0.5 UNIT mA mA mA mA mA mA mA V V V mA IL Latching current VD = 12 V; IGT = 0.1 A IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current VD = 12 V; IGT = 0.1 A IT = 17 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt dIcom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 C; IT(RMS) = 12 A; without snubber; gate open circuit ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s MIN. 1000 TYP. 4000 24 2 MAX. UNIT V/s A/ms s 2 Device does not trigger in the T2-, G+ quadrant. September 1997 2 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA212B series B 20 Ptot / W BT138 Tmb(max) / C 95 = 180 15 IT(RMS) / A BT138 15 1 120 90 60 99 C 102.5 10 110 10 30 5 5 117.5 0 0 5 IT(RMS) / A 10 125 15 0 -50 0 50 Tmb / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle. ITSM / A BTA212 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. 1000 25 IT(RMS) / A BT138 20 dI T /dt limit 100 15 10 IT T 10 10us I TSM time 5 Tj initial = 25 C max 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms. ITSM / A BT138 IT 80 T ITSM time Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 99C. VGT(Tj) VGT(25 C) 100 1.6 1.4 1.2 1 BT136 Tj initial = 25 C max 60 40 0.8 20 0.6 0.4 -50 0 1 10 100 Number of cycles at 50Hz 1000 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. September 1997 3 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation BTA212B series B 3 2.5 2 1.5 1 IGT(Tj) IGT(25 C) BTA212 T2+ G+ T2+ GT2- G- 40 IT / A Tj = 125 C Tj = 25 C BT138 typ max 30 Vo = 1.175 V Rs = 0.0316 Ohms 20 10 0.5 0 -50 0 0 50 Tj / C 100 150 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 3 2.5 2 1.5 1 TRIAC 10 Zth j-mb (K/W) BT138 1 unidirectional bidirectional 0.1 P D tp 0.01 0.5 0 -50 0.001 10us 0.1ms 1ms 10ms tp / s 0.1s 1s t 0 50 Tj / C 100 150 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. IH(Tj) IH(25C) Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. 3 2.5 2 1.5 1 0.5 TRIAC 1000 dIcom/dt (A/ms) BTA212 100 10 0 -50 0 50 Tj / C 100 150 1 20 40 60 80 Tj / C 100 120 140 Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. Fig.12. Typical, critical rate of change of commutating current dIcom/dt versus junction temperature. September 1997 4 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max 4.5 max 1.4 max BTA212B series B 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.13. SOT404 : centre pin connected to mounting base. Notes 1. Epoxy meets UL94 V0 at 1/8". MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". September 1997 5 Rev 1.200 Philips Semiconductors Product specification Three quadrant triacs high commutation DEFINITIONS Data sheet status Objective specification Product specification Limiting values BTA212B series B This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Rev 1.200 |
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